US 12,217,964 B2
Doped semiconductor layer forming method
Virginie Maffini Alvaro, Grenoble (FR); Hubert Bono, Grenoble (FR); and Julia Simon, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à lÉnergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on Nov. 25, 2020, as Appl. No. 17/105,182.
Claims priority of application No. 1914289 (FR), filed on Dec. 12, 2019.
Prior Publication US 2021/0184073 A1, Jun. 17, 2021
Int. Cl. H01L 21/265 (2006.01); H01L 21/04 (2006.01)
CPC H01L 21/2656 (2013.01) [H01L 21/046 (2013.01); H01L 21/26553 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of obtaining a doped semiconductor layer, comprising the successive steps of:
a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for said alloy and of a second element C which is not a dopant for said alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and
b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of said alloy,
wherein the dopant and non-dopant elements B and C substitute to atoms of element A1,
wherein, during step a), a complementary implantation of element A2 is performed to compensate for the addition of elements B and C.