US 12,217,962 B2
Semiconductor manufacturing system, method of manufacturing a semiconductor device, and semiconductor device
Shingo Honda, Yokkaichi Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 27, 2021, as Appl. No. 17/459,400.
Claims priority of application No. 2020-154754 (JP), filed on Sep. 15, 2020.
Prior Publication US 2022/0084824 A1, Mar. 17, 2022
Int. Cl. H01L 21/033 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 21/0338 (2013.01) [G03F 7/162 (2013.01); G03F 7/70525 (2013.01); H01J 37/32642 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01J 2237/3341 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
depositing an insulating film on a substrate;
depositing a first mask film on or over the insulating film;
depositing a hard mask film on the insulating film after the insulating film is deposited and before the first mask film is deposited;
depositing a second mask film on the first mask film;
forming a first resist pattern on the second mask film;
processing the second mask film by using the first resist pattern as a mask to form a second mask pattern including an edge;
forming a second resist pattern wherein an edge position is shifted from the first resist pattern on the second mask pattern, from which the first resist pattern is removed;
processing the first mask film using the second resist pattern and the second mask pattern as masks, to form a first mask pattern, the first mask pattern having an inclination angle of a side surface of a first side larger than an inclination angle of a side surface of a second side as seen in a cross-sectional view;
processing the hard mask film using the second resist pattern, the second mask pattern, and the first mask pattern as masks to form a third mask pattern, the third mask pattern having the inclination angle of the side surface of the first side larger than the inclination angle of the side surface of the second side in the cross-sectional view;
processing the insulating film using the first mask pattern as a mask to form a pattern, the pattern having the inclination angle of the side surface of the first side equal to the inclination angle of the side surface of the second side as seen in a cross-sectional view; and
wherein the forming of the pattern includes processing the insulating film using the first mask pattern and the third mask pattern as masks to form the pattern.