US 12,217,961 B2
Hard mask trimming in method for manufacturing semiconductor device
Chia-Chien Kuang, Hsinchu (TW); Tze-Chung Lin, Hsinchu (TW); and Li-Te Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 1, 2022, as Appl. No. 17/856,376.
Prior Publication US 2024/0006177 A1, Jan. 4, 2024
Int. Cl. H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/0206 (2013.01); H01L 21/3086 (2013.01); H01L 21/31122 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 21/0332 (2013.01); H01L 21/3081 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure; and
laterally trimming the hard mask portion by a lateral etching process which includes a radical etching process and a chemical etching process.