US 12,217,960 B2
Semiconductor devices and methods of manufacture
Min-Sung Kuo, Hsinchu (TW); I-Kai Hung, Hsinchu (TW); Po-Wei Chen, Hsinchu (TW); and Chung-Cheng Chen, Toufen (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 31, 2021, as Appl. No. 17/462,284.
Prior Publication US 2023/0065555 A1, Mar. 2, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/0254 (2013.01) [H01L 21/0273 (2013.01); H01L 21/76831 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
depositing a fence between a first region of a semiconductor substrate and a second region of the semiconductor substrate;
growing a III-V material layer on the semiconductor substrate after the depositing the fence;
masking the III-V material layer with a mask;
while the mask is present, removing the fence after the growing the III-V material layer to form a first opening; and
depositing material over the semiconductor substrate, wherein the depositing the material at least partially fills the first opening.