	US 12,217,958 B2
	Method of pre-treating substrate and method of directly forming graphene using the same
Keunwook Shin, Yongin-si (KR); Janghee Lee, Yongin-si (KR); Seunggeol Nam, Suwon-si (KR); Hyeonjin Shin, Suwon-si (KR); Hyunseok Lim, Suwon-si (KR); Alum Jung, Suwon-si (KR); Kyung-Eun Byun, Seongnam-si (KR); Jeonil Lee, Suwon-si (KR); and Yeonchoo Cho, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 3, 2020, as Appl. No. 16/807,702.
Claims priority of application No. 10-2019-0024851 (KR), filed on Mar. 4, 2019; and application No. 10-2020-0026762 (KR), filed on Mar. 3, 2020.
Prior Publication US 2020/0286732 A1, Sep. 10, 2020
Int. Cl. C23C 16/02 (2006.01); C23C 16/26 (2006.01); H01L 21/02 (2006.01)

CPC H01L 21/02527 (2013.01) [C23C 16/02 (2013.01); C23C 16/26 (2013.01); H01L 21/0257 (2013.01); H01L 21/02658 (2013.01)]

31 Claims

1. A method of pre-treating a substrate on which graphene is to be directly formed, the method comprising:

pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen,

wherein, in an initial period of the pre-treating the substrate, the carbon source and the hydrogen are simultaneously supplied to a chamber in which the substrate is disposed,

wherein the pre-treating the substrate is performed in the chamber, and

wherein a graphene seed is present on the substrate immediately after the pre-treating the substrate as a result of the pre-treating and a graphene layer is not present on the substrate immediately after the pre-treating the substrate.