US 12,217,956 B2
Carbon film deposition method and deposition apparatus
Yosuke Watanabe, Yamanashi (JP); and Shota Chida, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 14, 2022, as Appl. No. 17/647,996.
Claims priority of application No. 2021-016802 (JP), filed on Feb. 4, 2021.
Prior Publication US 2022/0246429 A1, Aug. 4, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01)
CPC H01L 21/02337 (2013.01) [C23C 16/26 (2013.01); C23C 16/56 (2013.01); H01L 21/02115 (2013.01); H01L 21/0228 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A carbon film deposition method comprising:
supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition; and
supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film;
wherein a cycle is repeated a plurality of times, the cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens.