US 12,217,955 B2
Method for etching features using a targeted deposition for selective passivation
Wenchi Liu, Milpitas, CA (US); Zhongkui Tan, Fremont, CA (US); Juan Valdivia, Fremont, CA (US); Colin Richard Rementer, Los Angeles, CA (US); Qing Xu, Fremont, CA (US); Yoko Yamaguchi, Union City, CA (US); Yoshie Kimura, Castro Valley, CA (US); Hua Xiang, Palo Alto, CA (US); and Yasushi Ishikawa, Fremont, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/619,979
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Jul. 1, 2020, PCT No. PCT/US2020/040432
§ 371(c)(1), (2) Date Dec. 16, 2021,
PCT Pub. No. WO2021/003224, PCT Pub. Date Jan. 7, 2021.
Claims priority of provisional application 62/870,271, filed on Jul. 3, 2019.
Prior Publication US 2022/0301853 A1, Sep. 22, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/045 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02274 (2013.01); H01L 21/32137 (2013.01); H01J 37/32082 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for patterning a stack having a mask with a plurality of mask features, comprising:
providing a targeted deposition, wherein the targeted deposition, comprises a plurality of cycles, wherein each cycle comprises:
flowing a precursor to deposit a layer of precursor; and
targeted curing the layer of precursor, comprising;
flowing a curing gas;
flowing a modification gas;
forming a plasma from the curing gas and modification gas; and
exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor; and
etching the stack through the targeted deposition.