| CPC H01L 21/02074 (2013.01) [B08B 3/08 (2013.01); B08B 5/00 (2013.01); C11D 7/02 (2013.01); C11D 7/245 (2013.01); C11D 7/261 (2013.01); C11D 7/264 (2013.01); C11D 7/265 (2013.01); C23C 16/0227 (2013.01); H01L 21/28562 (2013.01); C11D 2111/22 (2024.01)] | 19 Claims |

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1. A method for cleaning a substrate, the method comprising:
providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;
providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;
providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,
providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate,
wherein the cleaning agent comprises a halogen-containing beta diketonate.
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