US 12,217,949 B2
Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
Bassam Hanna Abraham, Millis, MA (US)
Assigned to IonQuest Corp., Milford, MA (US)
Filed by IonQuest Corp., Milford, MA (US)
Filed on Oct. 6, 2021, as Appl. No. 17/495,730.
Application 17/495,730 is a continuation in part of application No. 17/352,168, filed on Jun. 18, 2021, abandoned.
Application 17/352,168 is a continuation of application No. 17/127,527, filed on Dec. 18, 2020, granted, now 11,823,859.
Application 17/127,527 is a continuation in part of application No. 16/261,514, filed on Jan. 29, 2019, granted, now 10,913,998, issued on Feb. 9, 2021.
Application 17/127,527 is a continuation in part of application No. 16/025,928, filed on Jul. 2, 2018, abandoned.
Application 16/261,514 is a continuation of application No. 15/917,046, filed on Mar. 9, 2018, granted, now 10,227,692, issued on Mar. 12, 2019.
Application 16/025,928 is a continuation in part of application No. PCT/US2017/048438, filed on Aug. 24, 2017.
Application 15/917,046 is a continuation of application No. 15/261,119, filed on Sep. 9, 2016, granted, now 9,951,414, issued on Apr. 24, 2018.
Claims priority of provisional application 62/482,993, filed on Apr. 7, 2017.
Claims priority of provisional application 62/270,356, filed on Dec. 21, 2015.
Prior Publication US 2022/0042168 A1, Feb. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01)
CPC H01J 37/3444 (2013.01) [C23C 14/14 (2013.01); C23C 14/345 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01); C23C 14/354 (2013.01); H01J 37/3405 (2013.01); H01J 37/3417 (2013.01); H01J 37/3426 (2013.01); H01J 37/3435 (2013.01); H01J 37/3455 (2013.01); H01J 37/3464 (2013.01); H01J 37/3467 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A method of sputtering a layer on a substrate, the method comprising:
positioning a HEDP magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;
applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), the PCN comprising at least one inductor, a transformer, a full-wave diode bridge, and at least one capacitor; and
adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor using the PCN configured to cause said adjusting, thereby causing a resonance mode associated with the PCN, the PCN being configured to convert the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HTEDP magnetron with pulse current densities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signal operatively coupled to the cathode target, the PCN being configured to convert the unipolar negative DC voltage pulses to the asymmetric AC signal comprising a first negative voltage and a first positive voltage followed by a second negative voltage generating plasma for use during a subsequent negative voltage, the PCN being configured to cause an increase in amplitude of at least one of the negative voltage pules of the asymmetric AC signal in response to an increase in amplitude or pulse duration of the plurality of unipolar negative DC voltage pulses and the PCN being in the resonance mode, thereby causing sputtering discharge associated with the H-EDP magnetron to form the layer from the cathode target on the substrate, the substrate being connected to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and the plasma to the substrate.