US 12,217,948 B2
Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target
Masahiro Fujita, Osaka (JP); and Koji Nishioka, Osaka (JP)
Assigned to SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed by SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed on Mar. 26, 2021, as Appl. No. 17/213,757.
Prior Publication US 2022/0310371 A1, Sep. 29, 2022
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01)
CPC H01J 37/3417 (2013.01) [C23C 14/3407 (2013.01); H01J 37/3432 (2013.01); H01J 37/3435 (2013.01); H01J 2237/332 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A sputtering target comprising:
a backing plate; and
a target material bonded via a bonding material to a bonding region of the backing plate, wherein
a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein
a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.001% or more and 0.6% or less of the area of the bonding region, wherein
the bonding material is made of metal or alloys having a melting point of 723K or less, and
the bonding material consists of solder, and the solder is at least one metal selected from the group consisting of indium, tin, lead, silver, bismuth, cadmium, and antimony, or alloys thereof.