US 12,217,942 B2
Plasma processing apparatus
Lifu Li, Miyagi (JP); Hironobu Kudo, Miyagi (JP); and Hiroshi Tsujimoto, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 9, 2022, as Appl. No. 17/654,126.
Claims priority of application No. 2021-043840 (JP), filed on Mar. 17, 2021.
Prior Publication US 2022/0301830 A1, Sep. 22, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32532 (2013.01) [H01J 37/32724 (2013.01); H01J 2237/002 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber;
a substrate support disposed in the chamber, the substrate support including a bottom electrode;
a top electrode assembly disposed above the substrate support, the top electrode assembly including
a top electrode plate disposed such that a plasma process space is formed between the top electrode plate and the substrate support,
a thermally conductive plate disposed above the top electrode plate, the thermally conductive plate being thermally connected to the top electrode plate,
a coolant flow path disposed within the thermally conductive plate, and
at least one heating element thermally connected to the thermally conductive plate, the at least one heating element being disposed so as not to overlap with the coolant flow path in a plan view;
a temperature sensor configured to detect a temperature of the top electrode plate; and
a controller configured to control the at least one heating element and/or a coolant flowing through the coolant flow path, based on the temperature detected by the temperature sensor, to adjust the temperature of the top electrode plate,
wherein the at least one heating element includes
a first heating element disposed lower than the coolant flow path, and
a second heating element disposed higher than the coolant flow path.