US 12,217,936 B2
DC bias in plasma process
Sheng-Liang Pan, Hsinchu (TW); Bing-Hung Chen, San-Xia Town (TW); Chia-Yang Hung, Kaohsiung (TW); Jyu-Horng Shieh, Hsinchu (TW); Shu-Huei Suen, Jhudong Township (TW); Syun-Ming Jang, Hsinchu (TW); and Jack Kuo-Ping Kuo, Pleasanton, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 8, 2023, as Appl. No. 18/504,415.
Application 18/504,415 is a continuation of application No. 17/869,557, filed on Jul. 20, 2022, granted, now 11,854,766.
Application 17/869,557 is a continuation of application No. 16/177,530, filed on Nov. 1, 2018, granted, now 11,404,245, issued on Aug. 2, 2022.
Claims priority of provisional application 62/636,669, filed on Feb. 28, 2018.
Prior Publication US 2024/0071722 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01)
CPC H01J 37/32027 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/02063 (2013.01); H01L 21/0212 (2013.01); H01L 21/02233 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/31138 (2013.01); H01L 21/321 (2013.01); H01J 2237/3341 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method comprising:
placing a substrate on a pedestal within a chamber, the chamber comprising a first region and a second region separated by a gas distribution plate, the pedestal being disposed within the second region of the chamber, the substrate comprising negatively charged fluorine ions; and
performing a plasma process on the substrate, performing the plasma process comprises:
flowing an oxygen-containing gas into the first region;
generating a first plasma in the first region of the chamber;
exposing the substrate to the first plasma while applying a first negative direct current (DC) bias voltage;
stopping the flow of the oxygen-containing gas;
flowing a hydrogen-containing gas into the first region;
generating a second plasma in the first region of the chamber;
exposing the substrate to the second plasma while applying a second negative DC bias voltage; and
stopping the flow of the hydrogen-containing gas, wherein the first negative DC bias voltage is a same negative DC bias voltage as the second negative DC bias voltage, the same negative DC bias voltage being applied continuously from exposing the substrate to the first plasma to after exposing the substrate to the second plasma.