US 12,217,935 B2
Plasma processing methods using multiphase multifrequency bias pulses
Ya-Ming Chen, Austin, TX (US); Shyam Sridhar, Austin, TX (US); Peter Lowell George Ventzek, Austin, TX (US); and Alok Ranjan, Austin, TX (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 15, 2022, as Appl. No. 17/807,076.
Claims priority of provisional application 63/344,595, filed on May 22, 2022.
Prior Publication US 2023/0411116 A1, Dec. 21, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32018 (2013.01) [H01J 37/32165 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing method comprising:
generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma;
generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency (RF) bias power (LBP) applied during the glow phase; and
generating high-energy ions at the substrate using higher-frequency RF bias power (HBP) applied during an afterglow phase of the plasma, the RF frequency of the HBP being greater than the RF frequency of the LBP.