US 12,217,825 B2
Drive circuit and memory device
Zhonglai Liu, Hefei (CN); Xianjun Wu, Hefei (CN); and Anping Qiu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by ChangXin Memory Technologies, Inc., Hefei (CN)
Filed on Mar. 7, 2023, as Appl. No. 18/180,038.
Claims priority of application No. 202211080191.8 (CN), filed on Sep. 5, 2022.
Prior Publication US 2024/0079038 A1, Mar. 7, 2024
Int. Cl. G11C 5/02 (2006.01); G11C 8/08 (2006.01); H03K 3/037 (2006.01)
CPC G11C 8/08 (2013.01) [H03K 3/037 (2013.01); G11C 5/025 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A driver, characterized in that, comprising:
a phase driver, wherein the phase driver receives a first voltage signal, and is configured to output a second phase signal based on the first phase signal and a first voltage signal; and
a complementary phase driver, wherein the complementary phase driver comprises:
a first inverter, wherein the first inverter generates a complementary inverted phase signal based on a first complementary phase signal, where the first phase signal and the first complementary phase signal are mutually inverted signals; and
a second inverter, wherein the second inverter receives an output signal of the first inverter and a second voltage signal, wherein a voltage value of the second voltage signal is smaller than a voltage value of the first voltage signal, and wherein the second inverter outputs a second complementary phase signal based on a first complementary inversion phase signal and the second voltage signal.