US 12,217,808 B2
Methods and apparatus for NAND flash memory
Fu-Chang Hsu, San Jose, CA (US)
Assigned to NEO Semiconductor, Inc., San Jose, CA (US)
Filed by NEO Semiconductor, Inc., San Jose, CA (US)
Filed on Aug. 1, 2022, as Appl. No. 17/816,720.
Application 17/816,720 is a continuation in part of application No. 17/492,553, filed on Oct. 1, 2021.
Application 17/492,553 is a continuation in part of application No. 17/446,165, filed on Aug. 26, 2021.
Application 17/446,165 is a continuation in part of application No. 17/330,304, filed on May 25, 2021.
Application 17/330,304 is a continuation of application No. 16/849,875, filed on Apr. 15, 2020, granted, now 11,049,579, issued on Jun. 29, 2021.
Application 16/849,875 is a continuation in part of application No. 16/687,556, filed on Nov. 18, 2019, granted, now 11,056,190, issued on Jul. 6, 2021.
Claims priority of provisional application 63/349,571, filed on Jun. 6, 2022.
Claims priority of provisional application 63/116,159, filed on Nov. 19, 2020.
Claims priority of provisional application 63/112,038, filed on Nov. 10, 2020.
Claims priority of provisional application 63/107,386, filed on Oct. 29, 2020.
Claims priority of provisional application 63/105,877, filed on Oct. 27, 2020.
Claims priority of provisional application 63/104,305, filed on Oct. 22, 2020.
Claims priority of provisional application 63/094,343, filed on Oct. 20, 2020.
Claims priority of provisional application 63/091,895, filed on Oct. 14, 2020.
Claims priority of provisional application 63/090,171, filed on Oct. 9, 2020.
Claims priority of provisional application 63/086,543, filed on Oct. 1, 2020.
Claims priority of provisional application 63/070,266, filed on Aug. 26, 2020.
Claims priority of provisional application 62/884,139, filed on Aug. 7, 2019.
Claims priority of provisional application 62/871,198, filed on Jul. 7, 2019.
Claims priority of provisional application 62/848,567, filed on May 15, 2019.
Claims priority of provisional application 62/843,556, filed on May 5, 2019.
Claims priority of provisional application 62/799,669, filed on Jan. 31, 2019.
Claims priority of provisional application 62/783,199, filed on Dec. 20, 2018.
Claims priority of provisional application 62/774,128, filed on Nov. 30, 2018.
Claims priority of provisional application 62/770,150, filed on Nov. 20, 2018.
Claims priority of provisional application 62/768,979, filed on Nov. 18, 2018.
Prior Publication US 2023/0022531 A1, Jan. 26, 2023
Int. Cl. G11C 16/00 (2006.01); G11C 16/12 (2006.01); G11C 16/24 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for programming a memory device having a plurality of memory chips wherein each chip has multiple-level-cells, the method comprising:
loading first data in a first chip;
programming the first data into selected cells of the first chip using a single-level-cell (SLC) programming mode;
reprogramming the first data stored in the selected cells of the first chip to other cells of the first chip using a multiple-level-cell programming mode;
repeating the operations of loading, programming, and reprogramming for the remaining chips;
wherein the loading operations for the remaining chips begin at the completion of the loading operation for the first chip and occur in a non-overlapping sequential manner; and
wherein the loading operations for the remaining chips are performed in parallel with the programming and reprogramming operations of the first chip.