US 12,217,802 B2
Non-volatile memory device, storage device including the same, and operating method thereof
Jooyong Park, Bucheon-si (KR); Sangwon Park, Seoul (KR); Dongjin Shin, Hwaseong-si (KR); Suchang Jeon, Seoul (KR); and Seungyong Choi, Daegu (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 19, 2022, as Appl. No. 17/648,311.
Claims priority of application No. 10-2021-0083802 (KR), filed on Jun. 28, 2021.
Prior Publication US 2022/0415408 A1, Dec. 29, 2022
Int. Cl. G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); G11C 16/20 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile memory device comprising:
a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other;
a user area configured to store user data;
an initialization register configured to store the first initial data or the second initial data, and to update the second initial data in whole or in part; and
control logic configured to receive a command latch enable signal, an address latch enable signal, a chip enable signal, a write enable signal, a read enable signal, and a data strobe signal through control pins and latch a command or an address at an edge of the write enable signal according to the chip enable signal and the address latch enable signal, to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register,
wherein one of the first initial data or the second initial data comprises at least one performance parameter related to an operation time of the non-volatile memory device,
wherein the other of the first initial data or the second initial data comprises at least one reliability parameter related to at least one of retention, endurance, voltage or verification of the non-volatile memory device,
wherein one of the first initial data or the second initial data is provided in common, and the other of the first initial data or the second initial data is selectable by a user.