US 12,217,797 B2
Storage device and operating method thereof
Hojin Chun, Seoul (KR); and Jiwon Park, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 10, 2022, as Appl. No. 17/806,333.
Claims priority of application No. 10-2021-0149698 (KR), filed on Nov. 3, 2021.
Prior Publication US 2023/0138032 A1, May 4, 2023
Int. Cl. G11C 14/00 (2006.01)
CPC G11C 14/0018 (2013.01) 20 Claims
OG exemplary drawing
 
1. An operating method of a storage device, the method comprising:
sensing an external voltage supplied from a host device;
selecting a data transfer mode, wherein the data transfer mode is either a normal mode or a brown-out mode depending upon the external voltage; and
performing a write operation or a read operation according to the selected mode, wherein:
the data transfer mode is selected as the normal mode when the external voltage is within a normal range between a first operation voltage and a second operation voltage, and the data transfer mode is selected as the brown-out mode when the external voltage is within a low power range below the normal range and between the second operation voltage and a power-off detection voltage,
wherein the first operation voltage is a maximum operation voltage of the normal range and the second operation voltage is a minimum operation voltage of the normal range,
wherein the storage device supports a write through operation and a nonvolatile memory device (NVM) buffer operation in both the normal mode and the brown-out mode, and
wherein an operation speed of the brown-out mode is different than an operation speed of the normal mode.