first and second sense lines, each sense line coupled to a respective set of memory cells;

a sense amplifier including first and second sense nodes, and further including a first isolation switch and a second isolation switch, the first isolation switch coupled to the first sense node and the first sense line and configured to provide a conductive path between the first sense node and the first sense line when activated, the second isolation switch coupled to the second sense node and the second sense line and configured to provide a conductive path between the second sense node and the second sense line when activated; and

a control signal driver circuit configured to receive an input control signal and provide an output control signal responsive to the input control signal, the output control signal provided to the first and second isolation switches, the control signal driver circuit further configured to provide the output control signal having a low logic level voltage, and further configured to provide the output control signal having a first high logic level voltage for a first portion of a sense amplifier operation, and provide the active output control signal having a second high logic level voltage for a second portion of the sense amplifier operation, the second high logic level voltage greater than the first high logic level voltage.