US 12,217,782 B2
Current steering in reading magnetic tunnel junction
Gaurav Gupta, Hsinchu (TW); Zhiqiang Wu, Hsinchu (TW); and Yih Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 9, 2023, as Appl. No. 18/332,674.
Application 18/332,674 is a continuation of application No. 17/703,869, filed on Mar. 24, 2022, granted, now 11,676,648.
Application 17/703,869 is a continuation of application No. 16/655,056, filed on Oct. 16, 2019, granted, now 11,309,005, issued on Apr. 19, 2022.
Claims priority of provisional application 62/753,751, filed on Oct. 31, 2018.
Prior Publication US 2023/0326507 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1673 (2013.01) [G11C 11/161 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a magnetic tunnel junction structure;
a first bipolar junction transistor having a first emitter node and a first base node, the first emitter node being coupled to a sensing path and the first base node being coupled to a read path that includes the magnetic tunnel junction structure;
a reference path coupled to provide a reference signal the reference path including a second bipolar junction transistor that substantially mirrors the first bipolar junction transistor, and
a sensing circuitry configured to evaluate a signal in the sensing path with respect to the reference signal.