US 12,217,775 B2
Magnetoresistance effect element and Heusler alloy
Kazuumi Inubushi, Tokyo (JP); Katsuyuki Nakada, Tokyo (JP); and Tetsuya Uemura, Hokkaido (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Aug. 31, 2023, as Appl. No. 18/240,657.
Application 18/240,657 is a division of application No. 17/853,429, filed on Jun. 29, 2022, granted, now 11,769,523.
Application 17/853,429 is a division of application No. 16/984,381, filed on Aug. 4, 2020, granted, now 11,410,689, issued on Aug. 9, 2022.
Claims priority of application No. 2019-146630 (JP), filed on Aug. 8, 2019; and application No. 2020-041353 (JP), filed on Mar. 10, 2020.
Prior Publication US 2024/0062777 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11B 5/39 (2006.01); G01R 33/09 (2006.01); G11C 11/16 (2006.01); H01F 10/193 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01)
CPC G11B 5/3903 (2013.01) [G01R 33/093 (2013.01); G11B 5/3929 (2013.01); G11C 11/161 (2013.01); H01F 10/1936 (2013.01); H01F 10/325 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); G11B 2005/3996 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer,
wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ. . .  (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β and 0.5<α<1.9).