| CPC G09G 3/325 (2013.01) [G09G 3/3266 (2013.01); G09G 3/3291 (2013.01)] | 42 Claims |
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1. An organic light emitting diode display comprising:
a substrate;
a first pixel and a second pixel disposed on the substrate; and
a plurality of first shield patterns disposed on the substrate,
wherein each of the first pixel and the second pixel comprises:
a driving transistor including a first gate electrode, a first channel region disposed in a semiconductor layer, a first electrode electrically connected to a driving voltage line transmitting a driving voltage, and a second electrode,
a second transistor including a second gate electrode, a second channel region disposed in the semiconductor layer, a first electrode, and a second electrode connected to the first electrode of the driving transistor,
a third transistor including a third gate electrode, a third channel region disposed in the semiconductor layer, a first electrode connected to the second electrode of the driving transistor, and a second electrode connected to the first gate electrode of the driving transistor,
a fourth transistor including a fourth gate electrode, a fourth channel region disposed in the semiconductor layer, a first electrode connected to the second electrode of the third transistor, and a second electrode connected to an initialization voltage line,
a first contact portion connects the first electrode of the second transistor to a corresponding data line, and
an organic light emitting diode including an anode electrically connected to the second electrode of the driving transistor,
wherein the third transistor involved in each of the first pixel and the second pixel respectively includes a first sub transistor and a second sub transistor connected in series to each other at a first semiconductor connection portion disposed in the semiconductor layer,
wherein the third transistor and the fourth transistor involved in each of the first pixel and the second pixel are respectively connected to each other at a second semiconductor connection portion disposed between the third channel region and the fourth channel region in the semiconductor layer,
wherein the first electrode of the second transistor is disposed in the semiconductor layer and disposed between the second channel region and the first contact portion in each of the first pixel and the second pixel,
wherein each of the first semiconductor connection portion and the second semiconductor connection portion involved in each of the first pixel and the second pixel overlaps at least a portion of a corresponding one of the plurality of first shield patterns,
wherein the first electrode of the second transistor involved in each of the first pixel and the second pixel does not overlap any one of the plurality of first shield patterns, and
wherein the plurality of first shield patterns receive the driving voltage.
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