US 12,217,686 B2
Pixel and organic light emitting display device having the pixel
Chong Chul Chai, Yongin-si (KR); Dong Woo Kim, Yongin-si (KR); Kyoung Ju Shin, Yongin-si (KR); and Bo Yong Chung, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Sep. 25, 2023, as Appl. No. 18/473,549.
Application 16/709,234 is a division of application No. 15/811,922, filed on Nov. 14, 2017, granted, now 10,529,283, issued on Jan. 7, 2020.
Application 18/473,549 is a continuation of application No. 17/318,564, filed on May 12, 2021, granted, now 11,769,451.
Application 17/318,564 is a continuation of application No. 16/709,234, filed on Dec. 10, 2019, granted, now 11,024,227, issued on Jun. 1, 2021.
Claims priority of application No. 10-2016-0162995 (KR), filed on Dec. 1, 2016.
Prior Publication US 2024/0013722 A1, Jan. 11, 2024
Int. Cl. G09G 3/3233 (2016.01); G09G 3/3258 (2016.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01); G09G 3/36 (2006.01)
CPC G09G 3/3233 (2013.01) [G09G 3/3258 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 3/3648 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01); G09G 2310/0216 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0214 (2013.01); G09G 2320/045 (2013.01); G09G 2320/0626 (2013.01); G09G 2330/023 (2013.01); H01L 27/1225 (2013.01); H01L 29/78672 (2013.01); H01L 29/7869 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A pixel, comprising:
a light emitting diode;
a first transistor to control an amount of current flowing from a first driving power source to a second driving power source, via the light emitting diode, based on a voltage of a first node;
a first stabilizing transistor coupled between a first electrode of the first transistor and the first node;
a storage capacitor coupled between the first node and an anode of the light emitting diode, the storage capacitor being indirectly coupled to the first driving power source; and
a second transistor coupled between a data line and a second node, wherein
the first transistor and the second transistor are N-type poly-silicon semiconductor transistors,
the first stabilizing transistor is an N-type oxide semiconductor transistor, and
a gate electrode of the first stabilizing transistor and a gate electrode of the second transistor are connected to different lines.