US 12,217,651 B2
Display substrate and manufacturing method thereof, and display apparatus
Lizhong Wang, Beijing (CN); Ce Ning, Beijing (CN); Yunping Di, Beijing (CN); Binbin Tong, Beijing (CN); Chengfu Xu, Beijing (CN); Dapeng Xue, Beijing (CN); Shuilang Dong, Beijing (CN); and Nianqi Yao, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/913,258
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Nov. 4, 2021, PCT No. PCT/CN2021/128672
§ 371(c)(1), (2) Date Sep. 21, 2022,
PCT Pub. No. WO2022/247150, PCT Pub. Date Dec. 1, 2022.
Claims priority of application No. 202110564793.X (CN), filed on May 24, 2021.
Prior Publication US 2024/0212564 A1, Jun. 27, 2024
Int. Cl. G09G 3/20 (2006.01)
CPC G09G 3/2092 (2013.01) [G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/062 (2013.01); G09G 2310/08 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A display substrate, comprising:
a base; and
a plurality of driving circuits disposed on the base, each of the plurality of the driving circuits comprising:
a first transistor group; and
a second transistor group, wherein the first transistor group is located at a side of the second transistor group away from the base;
wherein the first transistor group and the second transistor group each comprises at least one transistor, active layers of transistors in the first transistor group are made of oxide semiconductor, and active layers of transistors in the second transistor group are made of polysilicon; and
an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base;
the first transistor group comprises one first transistor and one second transistor, the second transistor group comprises one third transistor, and the third transistor is any one of the transistors in the driving circuit except the first transistor and the second transistor; and
the driving circuit further comprises a storage capacitor, wherein a second electrode of the first transistor and a second electrode of the second transistor are connected to a first end of the storage capacitor.