US 12,217,637 B2
Display backplane and preparation method therefor, and display apparatus
Yang Yue, Beijing (CN); Wei Wang, Beijing (CN); Ruoyu Ma, Beijing (CN); Shunhang Zhang, Beijing (CN); Chuanxiang Xu, Beijing (CN); Xiang Li, Beijing (CN); Yong Yu, Beijing (CN); Shi Shu, Beijing (CN); and Qi Yao, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/791,226
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Aug. 27, 2021, PCT No. PCT/CN2021/114996
§ 371(c)(1), (2) Date Mar. 2, 2023,
PCT Pub. No. WO2023/024069, PCT Pub. Date Mar. 2, 2023.
Prior Publication US 2024/0177634 A1, May 30, 2024
Int. Cl. G09F 9/33 (2006.01); H01L 27/12 (2006.01); H01L 27/15 (2006.01)
CPC G09F 9/33 (2013.01) [H01L 27/12 (2013.01); H01L 27/15 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A display backplane, comprising a plurality of display units, wherein:
at least one display unit comprises a pixel area and a light transmitting area, the pixel area is configured to perform image display and the light transmitting area is configured to transmit light; in a direction perpendicular to the display backplane, the light transmitting area comprises a substrate and a light transmitting structure layer arranged on the substrate, and the light transmitting structure layer is provided with light transmitting holes;
the light transmitting structure layer comprises: a buffer layer arranged on the substrate, a first passivation layer arranged on a side of the buffer layer away from the substrate, a first planarization layer arranged on a side of the first passivation layer away from the substrate, a second planarization layer arranged on a side of the first planarization layer away from the substrate, a second passivation layer arranged on a side of the second planarization layer away from the substrate, a third passivation layer arranged on a side of the second passivation layer away from the substrate, and a third planarization layer arranged on a side of the third passivation layer away from the substrate; and the light transmitting holes provided on the light transmitting structure layer comprise any one or more of: a through hole penetrating the buffer layer, a through hole penetrating the first passivation layer, a through hole penetrating the first planarization layer, a through hole penetrating the second planarization layer, a through hole penetrating the second passivation layer, a through hole penetrating the third passivation layer, and a through hole penetrating the third planarization layer; and
the second passivation layer comprises a first passivation sublayer and a second passivation sublayer, the second passivation sublayer is arranged on a side of the first passivation sublayer away from the substrate, a material of the first passivation sublayer comprises silicon nitride, and a material of the second passivation sublayer comprises loose silicon nitride.