US 12,216,979 B2
Method for correcting mask pattern, apparatus for correcting mask pattern and method for manufacturing semiconductor device
Shuping Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 11, 2022, as Appl. No. 17/647,730.
Application 17/647,730 is a continuation of application No. PCT/CN2021/110608, filed on Aug. 4, 2021.
Claims priority of application No. 202110605120.4 (CN), filed on May 31, 2021.
Prior Publication US 2022/0382142 A1, Dec. 1, 2022
Int. Cl. G06F 30/30 (2020.01); G03F 1/36 (2012.01); G03F 1/44 (2012.01); G03F 7/00 (2006.01); G06F 30/398 (2020.01)
CPC G06F 30/398 (2020.01) [G03F 1/36 (2013.01); G03F 1/44 (2013.01); G03F 7/70441 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for correcting a mask pattern, comprising:
acquiring an initial pattern of a mask, the initial pattern comprising a scribe line area and die areas which are spaced, wherein the scribe line area is located between two adjacent die areas, each of the die areas comprises at least one die sub-area and at least one first sub-test element group (TEG) area, and the scribe line area comprises scribe line sub-areas and second sub-TEG areas, the first sub-TEG area and the second sub-TEG area are adjacent to each other, and the first sub-TEG area and the second sub-TEG area constitute a TEG area; and
performing an optical proximity correction on an area of the initial pattern excluding TEG areas, so as to acquire a final pattern.