US 12,216,924 B2
Semiconductor device and semiconductor storage device
Tsuyoshi Atsumi, Kodaira (JP); and Yasuhiko Kurosawa, Fujisawa (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Nov. 2, 2023, as Appl. No. 18/500,577.
Application 18/500,577 is a continuation of application No. 17/988,081, filed on Nov. 16, 2022, granted, now 11,875,041.
Application 17/988,081 is a continuation of application No. 17/200,264, filed on Mar. 12, 2021, granted, now 11,543,977, issued on Jan. 3, 2023.
Claims priority of application No. 2020-096429 (JP), filed on Jun. 2, 2020.
Prior Publication US 2024/0061590 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 19/00 (2006.01); G06F 3/06 (2006.01); G06F 7/58 (2006.01); G11C 7/10 (2006.01)
CPC G06F 3/0623 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G06F 7/584 (2013.01); G11C 7/1006 (2013.01); G11C 7/1036 (2013.01); G11C 19/00 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of generating a random number, comprising:
generating first random number sequence data by performing a first XorShift operation on inputted data;
generating a seed by using the first random number sequence data; and
generating second random number sequence data by performing a second XorShift operation on the seed, wherein
the first random number sequence data are generated by using a plurality of XorShift circuits and a nonlinear transformation circuit, and
the nonlinear transformation circuit is configured to perform a nonlinear transformation on output data from at least one of the plurality of XorShift circuits.