US 12,216,913 B2
System and method of providing atomicity to large writes to persistent memory
Angel Benedicto Aviles, Jr., San Jose, CA (US); Vinod Kumar Daga, Santa Clara, CA (US); Vamsikrishna Sadhu, Santa Clara, CA (US); and Tejas Hunsur Krishna, Sunnyvale, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 15, 2022, as Appl. No. 17/888,426.
Application 17/888,426 is a continuation of application No. 16/795,562, filed on Feb. 19, 2020, granted, now 11,416,148.
Claims priority of provisional application 62/959,869, filed on Jan. 10, 2020.
Prior Publication US 2022/0391105 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0631 (2013.01); G06F 3/0685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage system, comprising:
a storage medium;
memory comprising non-volatile memory that is accessible in a random access, byte-addressable manner; and
a controller coupled to the storage medium and the memory, the controller being configured to determine a modification of data of an application stored in a segment of the memory based on a first indication in the memory that the segment of the memory is allocated to the application and on a second indication in the memory that the data in the segment of the memory is for storage in the storage medium, wherein the first and second indications comprise bits associated with a cache line and a data structure.