US 12,216,908 B2
Memory systems, operation methods thereof, and electronic devices
Zhen Huang, Hubei (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Dec. 30, 2022, as Appl. No. 18/148,961.
Claims priority of application No. 202211447947.8 (CN), filed on Nov. 18, 2022.
Prior Publication US 2024/0168643 A1, May 23, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0673 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system comprising:
a memory, wherein the memory includes:
a plurality of word lines;
a plurality of multi-bit memory cells coupled to the plurality of word lines; and
multiple types of pages, wherein type of page corresponds to at least one read voltage level; and
a memory controller coupled to the memory and configured to:
obtain, when a read operation of the memory fails, a target read retry table from a set of read retry tables wherein, each type of page in the multiple types of pages corresponds to a plurality of read retry tables, and wherein the set of read retry tables includes all read retry tables corresponding to the multiple types of pages, and wherein a read retry table corresponding to each type of page includes a set of bias voltages corresponding to respective read voltage levels that are used to distinguish stored data of corresponding bit; and
obtain read retry voltages through the target read retry table, and perform a read retry operation using the read retry voltages.