US 12,216,588 B2
Semiconductor memory apparatus, memory module, and memory system including memory module
Sung Woo Hyun, Icheon-si (KR); Hyeong Tak Ji, Icheon-si (KR); Myoung Seo Kim, Icheon-si (KR); Jae Hoon Kim, Icheon-si (KR); and Eui Cheol Lim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Dec. 6, 2021, as Appl. No. 17/543,481.
Claims priority of provisional application 63/124,245, filed on Dec. 11, 2020.
Claims priority of application No. 10-2021-0142969 (KR), filed on Oct. 25, 2021.
Prior Publication US 2022/0188243 A1, Jun. 16, 2022
Int. Cl. G06F 12/10 (2016.01)
CPC G06F 12/10 (2013.01) 17 Claims
OG exemplary drawing
 
1. A memory module comprising:
J memory chips configured to input and output (input/output) data in response to each of a plurality of translated address signals; and
an address remapping circuit configured to generate a plurality of preliminary translated address signals by adding first correction bit values to a target address signal provided from a device external to the memory module, and to generate the plurality of translated address signals by shifting all bits of each of the plurality of preliminary translated address signals so that a group of K bits included in a bit string of each of the plurality of preliminary translated address signals are moved to a different position of each bit string,
wherein J represents a number greater than 2, and
wherein K represents a number greater than 2.