US 12,216,413 B2
Device and method to remove debris from an extreme ultraviolet (EUV) lithography system
Chun-Han Lin, Hsinchu (TW); Chieh Hsieh, Taoyuan (TW); Sheng-Kang Yu, Hsinchu (TW); Shang-Chieh Chien, New Taipei (TW); Heng-Hsin Liu, New Taipei (TW); and Li-Jui Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/231,170.
Application 18/231,170 is a continuation of application No. 17/548,016, filed on Dec. 10, 2021.
Claims priority of provisional application 63/178,896, filed on Apr. 23, 2021.
Prior Publication US 2023/0375950 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01)
CPC G03F 7/70916 (2013.01) [G03F 7/70033 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
irradiating metal debris deposited in an extreme ultraviolet (EUV) lithography system with a laser having a wavelength greater than absorption wavelengths of the metal debris and a material of the EUV lithography system;
controlling a frequency of the laser to ionize the metal debris; and
removing the metal debris.