US 12,216,409 B2
Exposure system, laser control parameter production method, and electronic device manufacturing method
Koichi Fujii, Oyama (JP); and Osamu Wakabayashi, Oyama (JP)
Assigned to Gigaphoton Inc., Tochigi (JP)
Filed by Gigaphoton Inc., Tochigi (JP)
Filed on Aug. 3, 2022, as Appl. No. 17/817,182.
Application 17/817,182 is a continuation of application No. PCT/JP2020/012413, filed on Mar. 19, 2020.
Prior Publication US 2022/0373893 A1, Nov. 24, 2022
Int. Cl. G03F 7/00 (2006.01); H01S 3/08 (2023.01); H01S 3/094 (2006.01); H01S 3/0941 (2006.01); H01S 3/13 (2006.01); H01S 3/16 (2006.01); H01S 3/225 (2006.01)
CPC G03F 7/70041 (2013.01) [G03F 7/70058 (2013.01); H01S 3/094076 (2013.01); H01S 3/0941 (2013.01); H01S 3/1305 (2013.01); H01S 3/1625 (2013.01); H01S 3/1636 (2013.01); H01S 3/2251 (2013.01); H01S 3/08059 (2013.01)] 23 Claims
OG exemplary drawing
 
1. An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam, the exposure system comprising:
a laser apparatus configured to emit the pulse laser beam;
an illumination optical system through which the pulse laser beam is guided to the reticle;
a reticle stage configured to move the reticle; and
a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage,
the reticle having a first region and a second region,
the processor being configured to instruct the laser apparatus about, based on a proximity effect characteristic corresponding to each of the first region and the second region, a value of a control parameter of the pulse laser beam corresponding to each of the regions so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each of the regions from a reference proximity effect characteristic is in an allowable range, and
the control parameter includes at least one of a wavelength and a spectrum line width.