US 12,216,407 B2
Method and apparatus for multi-spray RRC process with dynamic control
Ming-Hsuan Chuang, Hsinchu (TW); Po-Sheng Lu, Hsinchu (TW); Shou-Wen Kuo, Hsinchu (TW); Cheng-Yi Huang, Hsinchu (TW); and Chia-Hung Chu, Pingzhen (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Feb. 27, 2023, as Appl. No. 18/114,690.
Application 18/114,690 is a continuation of application No. 16/684,457, filed on Nov. 14, 2019, granted, now 11,592,748.
Claims priority of provisional application 62/773,446, filed on Nov. 30, 2018.
Prior Publication US 2023/0221645 A1, Jul. 13, 2023
Int. Cl. G03F 7/16 (2006.01); G03F 7/004 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/162 (2013.01) [G03F 7/0048 (2013.01); H01L 21/0273 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
dispensing a first layer of solvent on a substrate while spinning at a first speed for a first time period such that the first layer of the solvent covers a first area of the substrate with a first radius and a first thickness;
dispensing the solvent on the substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent such that the second layer of the solvent covers a second area of the substrate with a second radius and a second thickness, wherein the second speed is less than the first speed; and
dispensing the solvent on the substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent such that the third layer of the solvent covers a third area of the substrate with a third radius and a third thickness, wherein the first and second radii are less than the third radii, and wherein the first and third thicknesses are less than the second thickness.