US 12,216,399 B2
Method of manufacturing semiconductor device
Chih-Tsung Shih, Hsinchu (TW); Tsung-Chih Chien, Caotun Township (TW); Tsung Chuan Lee, Taipei (TW); and Hao-Shiang Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 20, 2024, as Appl. No. 18/582,045.
Application 18/582,045 is a continuation of application No. 18/126,898, filed on Mar. 27, 2023, granted, now 11,940,727.
Application 18/126,898 is a continuation of application No. 17/870,108, filed on Jul. 21, 2022, granted, now 11,614,683, issued on Mar. 28, 2023.
Application 17/870,108 is a continuation of application No. 17/193,236, filed on Mar. 5, 2021, granted, now 11,415,879, issued on Aug. 16, 2022.
Prior Publication US 2024/0192588 A1, Jun. 13, 2024
Int. Cl. G03F 7/20 (2006.01); G03F 1/00 (2012.01); H01L 21/027 (2006.01); H01L 21/673 (2006.01); G03F 7/00 (2006.01)
CPC G03F 1/06 (2013.01) [H01L 21/0274 (2013.01); H01L 21/67359 (2013.01); G03F 7/70741 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
removing a reticle from a reticle pod, the reticle pod comprising:
a base including a first surface,
a cover including a second surface facing the first surface, the base and the cover forming an internal space housing the reticle,
a plurality of restraining mechanisms arranged in the internal space and securing the reticle, and
at least two barriers spaced from each other, concentrically arranged in the internal space, and at least partially surrounding the reticle, the at least two barriers being configured to limit passage of contaminants between the internal space and an external environment of the reticle pod; and
exposing the reticle to radiation to reflect patterned radiation on a photoresist coated substrate.