US 12,216,344 B2
Optical modulator and method of fabricating an optical modulator
Adam Scofield, Los Angeles, CA (US)
Assigned to Rockley Photonics Limited, Altrincham (GB)
Appl. No. 17/753,193
Filed by ROCKLEY PHOTONICS LIMITED, Altrincham (GB)
PCT Filed Aug. 25, 2020, PCT No. PCT/EP2020/073760
§ 371(c)(1), (2) Date Feb. 23, 2022,
PCT Pub. No. WO2021/037857, PCT Pub. Date Mar. 4, 2021.
Claims priority of provisional application 62/938,823, filed on Nov. 21, 2019.
Claims priority of provisional application 62/891,870, filed on Aug. 26, 2019.
Claims priority of application No. 1915141 (GB), filed on Oct. 18, 2019.
Prior Publication US 2022/0276512 A1, Sep. 1, 2022
Int. Cl. G02B 6/12 (2006.01); G02F 1/025 (2006.01)
CPC G02F 1/025 (2013.01) [G02B 6/12 (2013.01); G02B 6/12004 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12173 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12178 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A MOS capacitor-type optical modulator comprising:
a silicon-on-insulator (SOI) substrate;
a first doped region in a silicon device layer of the SOI substrate; and
a second doped crystalline region laterally separated from the first doped region by a vertically extending insulator layer to form a lateral MOS capacitor region, wherein the first doped region, second doped crystalline region and insulator layer are formed from different materials,
wherein the insulator layer extends at an oblique angle relative to the substrate, so as to laterally separate the second doped crystalline region from the first doped region.