| CPC G01T 1/24 (2013.01) [G01T 1/2928 (2013.01)] | 16 Claims |
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1. A radiation detector comprising:
a semiconductor substrate;
a recess in the semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess;
semiconductor nanocrystals in the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate;
a first doped semiconductor region in the semiconductor substrate; and
a second doped semiconductor region in the semiconductor substrate;
wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.
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