US 12,216,152 B2
Gallium nitride-based devices and methods of testing thereof
Yi-An Lai, Taipei (TW); Chan-Hong Chern, Palo Alto, CA (US); and Cheng-Hsiang Hsieh, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 21, 2023, as Appl. No. 18/516,106.
Application 18/516,106 is a continuation of application No. 17/737,717, filed on May 5, 2022, granted, now 11,852,675.
Claims priority of provisional application 63/294,505, filed on Dec. 29, 2021.
Prior Publication US 2024/0085472 A1, Mar. 14, 2024
Int. Cl. G01R 31/28 (2006.01); H01L 21/02 (2006.01)
CPC G01R 31/2853 (2013.01) [H01L 21/0254 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range;
a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range;
a plurality of first test terminals only operatively coupled to the first circuit; and
a plurality of second test terminals only operatively coupled to the second circuit.