US 12,216,149 B2
Degradation detection device and degradation detection method
Hideaki Majima, Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 20, 2021, as Appl. No. 17/408,041.
Claims priority of application No. 2020-157657 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0091176 A1, Mar. 24, 2022
Int. Cl. G01R 31/26 (2020.01); H03K 5/24 (2006.01)
CPC G01R 31/2608 (2013.01) [H03K 5/24 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A degradation detection device, comprising:
an output transistor with a source and a drain connected between a power source supply terminal and an output terminal;
a driving circuit that supplies a driving signal that controls on/off of the output transistor to the output transistor; and
an output circuit configured to:
integrate an output current that is discharged from a source side of the output transistor according to a drain charge over a predetermined period of time when the output transistor is shifted from an on-state thereof to an off-state thereof;
compare a value of an integral of the output current with a predetermined threshold; and
output a signal that indicates that degradation of the output transistor is absent in response to the value of the integral being larger than the predetermined threshold and that the degradation of the output transistor is present in response to the value of the integral being smaller than the predetermined threshold.