US 12,216,073 B2
Hydrogen-sensitive material resistant to humidity interference, semiconductor resistive hydrogen sensor, and intelligent hydrogen sensing system, and preparation method and use thereof
Jia Yan, Jiangsu (CN); Zhilong Song, Jiangsu (CN); Hui Xu, Jiangsu (CN); and Huaming Li, Jiangsu (CN)
Assigned to JIANGSU UNIVERSITY, Jiangsu (CN)
Filed by Jiangsu University, Jiangsu (CN)
Filed on Sep. 11, 2024, as Appl. No. 18/882,115.
Application 18/882,115 is a continuation of application No. PCT/CN2023/084306, filed on Mar. 28, 2023.
Claims priority of application No. 202310204483.6 (CN), filed on Mar. 6, 2023.
Prior Publication US 2025/0003910 A1, Jan. 2, 2025
Int. Cl. G01N 27/12 (2006.01); G01N 33/00 (2006.01)
CPC G01N 27/123 (2013.01) [G01N 33/005 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A hydrogen-sensitive material resistant to humidity interference, comprising
a three-dimensional (3D) porous non-conductive metal oxide substrate,
a nano-scale WO3-x film deposited on an outer surface and an inner pore surface of the 3D porous non-conductive metal oxide substrate, and
Pd nanoclusters diffusely distributed on a surface of the nano-scale WO3-x film,
wherein the nano-scale WO3-x film is formed from oxygen vacancy-containing tungsten oxide.