	US 12,216,015 B2
	MEMS resonator sensor substrate for plasma, temperature, stress, or deposition sensing
Chuang-Chia Lin, San Ramon, CA (US); David Peterson, San Jose, CA (US); Philip Allan Kraus, San Jose, CA (US); and Amir Bayati, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 6, 2023, as Appl. No. 18/531,478.
Application 18/531,478 is a division of application No. 17/367,250, filed on Jul. 2, 2021, granted, now 11,874,189.
Prior Publication US 2024/0102876 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G01L 19/00 (2006.01); G01N 29/02 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01)

CPC G01L 19/0092 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02574 (2013.01); H03H 9/14502 (2013.01); G01N 29/022 (2013.01); G01N 2291/014 (2013.01)]

13 Claims

1. A method of measuring a plasma parameter in a plasma chamber, comprising:

providing a diagnostic substrate in the plasma chamber, wherein the diagnostic substrate comprises a first resonator with a first geometry and a second resonator with a second geometry;

measuring a baseline response from the first resonator and the second resonator in a vacuum without a plasma;

striking the plasma in the plasma chamber, wherein the first resonator and the second resonator are within the plasma;

measuring a first resonance frequency of the first resonator and a second resonance frequency of the second resonator;

extracting the plasma parameter or a wafer parameter from the first resonance frequency and the second resonance frequency; and

measuring a resonator response of the first resonator and the second resonator to a varying bias applied to the first resonator and the second resonator by a first guard ring and a second guard ring.