	US 12,215,888 B2
	Air treatment method and a system arranged for treating air in a clean room
Thomas Rosenørn, Birkerød (DK); Jonas Ingemar, København N (DK); Andrew Butcher, Brønshøj (DK); and Cecilie Litske Carstens, København V (DK)
Assigned to AIRLICH IP ApS, Allerød (DK)
Appl. No. 17/416,464
Filed by AIRLICH IP ApS, Allerød (DK)
PCT Filed Dec. 16, 2019, PCT No. PCT/DK2019/050392 § 371(c)(1), (2) Date Jun. 18, 2021, PCT Pub. No. WO2020/125889, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 2018 70823 (DK), filed on Dec. 19, 2018.
Prior Publication US 2022/0065471 A1, Mar. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. B01D 53/86 (2006.01); B01D 53/00 (2006.01); F24F 3/16 (2021.01); F24F 3/167 (2021.01); F24F 8/22 (2021.01)

CPC F24F 3/167 (2021.01) [B01D 53/007 (2013.01); B01D 53/8668 (2013.01); F24F 8/22 (2021.01); B01D 2251/104 (2013.01); B01D 2255/802 (2013.01); B01D 2257/206 (2013.01); B01D 2257/40 (2013.01); B01D 2257/708 (2013.01); B01D 2257/93 (2013.01); B01D 2259/4508 (2013.01); B01D 2259/804 (2013.01)]

17 Claims

1. An air treatment method arranged for treating an air flow to be entered into a semiconductor clean room, said air flow comprises at least one vapor phase compound, and wherein the air flow is subjected to at least one treatment process arranged for reducing the concentration of the at least one vapor phase compound in the treated air flow below a predefined threshold, and wherein a first treatment process of the treatment process comprises the steps of:

passing the air flow through at least one catalytic zone, and

subjecting the air flow to at least one photooxidation step, wherein said step comprises emitting, using at least one excimer lamp, a wavelength in the range between 126 nm and 240 nm, and

wherein the air flow is passed through the at least one catalytic zone before entering the at least one photooxidation step, and

wherein the least one vapor phase compound is an anime and the catalytic zone comprises a deNOx-catalyst and an oxidation catalyst, and wherein the air flow further comprises an organic compound selected from VOC's, silanes, phosphates, siloxanes, halocarbons and organometallic compounds.

6. A semiconductor clean room air treatment system, said semiconductor clean room air treatment system comprises at least one photooxidation zone and at least one catalytic zone, whereby the semiconductor clean room air treatment system is arranged such that the concentration of the at least one vapor phase compound in an air flow is reduced below a predefined threshold, wherein the at least one catalytic zone is arranged before the at least one photooxidation zone, seen in the flow direction, wherein the catalytic zone comprises a deNO_x-catalyst and an oxidation catalyst and wherein the air flow to be treated comprises at least one amine, and wherein said photooxidation zone comprises at least one excimer lamp arranged for emitting a wavelength in the range between 126 nm and 240 nm.