US 12,215,438 B2
Single-crystal diamond and method of manufacturing the same
Natsuo Tatsumi, Osaka (JP); Yoshiki Nishibayashi, Osaka (JP); Takuya Nohara, Itami (JP); Akihiko Ueda, Itami (JP); and Yutaka Kobayashi, Itami (JP)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (JP); and SUMITOMO ELECTRIC HARDMETAL CORP., Itami (JP)
Appl. No. 16/647,499
Filed by Sumitomo Electric Industries, Ltd., Osaka (JP); and SUMITOMO ELECTRIC HARDMETAL CORP., Itami (JP)
PCT Filed Sep. 14, 2018, PCT No. PCT/JP2018/034168
§ 371(c)(1), (2) Date Mar. 14, 2020,
PCT Pub. No. WO2019/059123, PCT Pub. Date Mar. 28, 2019.
Claims priority of application No. 2017-179057 (JP), filed on Sep. 19, 2017.
Prior Publication US 2020/0216974 A1, Jul. 9, 2020
Int. Cl. C30B 29/04 (2006.01); C23C 16/27 (2006.01); C30B 25/14 (2006.01)
CPC C30B 29/04 (2013.01) [C23C 16/27 (2013.01); C30B 25/14 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A single-crystal diamond comprising:
n types of regions different in total concentration of an impurity observed in an observed surface being in parallel to a (110) face and having surface roughness Ra not greater than 5 μm, the observed surface being obtained by polishing a surface of the single-crystal diamond,
n being 2 or 3,
each of the n types of regions having an area not smaller than 0.1 μm2,
at least one of a first line, a second line, and a third line on the observed surface crossing a boundary between the n types of regions at least four times,
the first line, the second line, and the third line being line segments that are in parallel to a <−110> direction and have a length of 1 mm,
a midpoint of the first line corresponding to a center of gravity of the observed surface,
a midpoint of the second line corresponding to a point distant from the center of gravity by 300 μm in a <001> direction,
a midpoint of the third line corresponding to a point distant from the center of gravity by 300 μm in a <00−1> direction,
the n types of regions including a first type region and a second type region, the second type region being lower in the total concentration of the impurity than the first type region, and
a ratio of an area of the second type region to an area of the first type region being 1/20 or more.