US 12,215,422 B2
Shower head structure and plasma processing apparatus using the same
Huan-Chieh Chen, Taichung (TW); Jhih-Ren Lin, New Taipei (TW); Tai-Pin Liu, Hsinchu County (TW); Shyue-Shin Tsai, Tainan (TW); and Keith Kuang-Kuo Koai, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Nov. 22, 2023, as Appl. No. 18/516,991.
Application 18/516,991 is a continuation of application No. 16/548,845, filed on Aug. 23, 2019, granted, now 11,859,284.
Prior Publication US 2024/0084450 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/40 (2006.01); B05B 1/18 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01)
CPC C23C 16/45565 (2013.01) [B05B 1/185 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A shower head structure, comprising:
a plate body having a first zone and a second zone;
a plurality of first through holes in the first zone; and
a plurality of second through holes in the second zone;
wherein the first zone is in connection with the second zone, the first zone is at the central region of the plate body, the second zone is at the peripheral region of the plate body, and the diameter of each of the second through holes is less than 2 times of a thickness of a Debye sheath layer;
wherein an amount of gas flow through the plurality of first through holes in the first zone per unit area is substantially equal to an amount of gas flow through the plurality of second through holes in the second zone per unit area; and
wherein an area of the first through holes per unit area is equal to an area of the second through holes per unit area, and an amount of the first through holes per unit area is less than an amount of the second through holes per unit area.