US 12,215,417 B2
Substrate processing method and substrate processing device
Satoshi Toda, Nirasaki (JP); and Tetsuro Takahashi, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Mar. 22, 2022, as Appl. No. 17/701,341.
Application 17/701,341 is a division of application No. 16/092,683, abandoned, previously published as PCT/JP2017/008590, filed on Mar. 3, 2017.
Claims priority of application No. 2016-081682 (JP), filed on Apr. 15, 2016.
Prior Publication US 2022/0213596 A1, Jul. 7, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C23F 1/08 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01)
CPC C23C 16/45502 (2013.01) [C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/52 (2013.01); C23F 1/08 (2013.01); H01L 21/306 (2013.01); H01L 21/31111 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A substrate processing method for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere using a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of the plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner, the method comprising:
performing a first mode while controlling the common exhaust mechanism so as to exhaust a processing gas in common from the plurality of processing parts; and
subsequently, performing a second mode in which a first gas as the processing gas is supplied to all of the plurality of processing parts under the same gas conditions, while exhausting the processing gas from the plurality of processing parts in a collective manner by the common exhaust mechanism,
wherein, in the first mode, a pressure difference is prevented from occurring between the plurality of processing parts, and
wherein, when performing the first mode,
in a portion of the plurality of processing parts, the substrate process is performed with the first gas which is the processing gas for the plurality of target substrates; and
in another portion of the plurality of processing parts, the first gas which is the processing gas for the plurality of target substrates is not supplied, a second gas is supplied as a supplement gas, and the substrate process is not performed.