US 12,215,416 B2
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
Eric Christopher Stevens, Tempe, AZ (US); Bhushan Zope, Phoenix, AZ (US); Shankar Swaminathan, Phoenix, AZ (US); Charles Dezelah, Helsinki (FI); Qi Xie, Wilsele (BE); and Giuseppe Alessio Verni, Ottignies (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Nov. 8, 2023, as Appl. No. 18/387,914.
Application 18/387,914 is a continuation of application No. 17/688,258, filed on Mar. 7, 2022, granted, now 11,827,978.
Application 17/688,258 is a continuation of application No. 16/992,806, filed on Aug. 13, 2020, granted, now 11,286,558.
Claims priority of provisional application 62/891,254, filed on Aug. 23, 2019.
Claims priority of provisional application 62/891,247, filed on Aug. 23, 2019.
Prior Publication US 2024/0068092 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/34 (2006.01); C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); G11C 5/06 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01)
CPC C23C 16/34 (2013.01) [C23C 16/0272 (2013.01); C23C 16/08 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); G11C 5/063 (2013.01); H01L 21/28088 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/488 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for depositing a molybdenum nitride film on a surface of a substrate, the method comprising:
performing one or more unit deposition cycles of a cyclical deposition process, wherein a unit deposition cycle comprises:
contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor; and
contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor,
wherein the molybdenum nitride film has a percentage roughness of less than 1.5%.