	US 12,215,266 B2
	Nanocrystal particles and processes for synthesizing the same
Hyunki Kim, Suwon-si (KR); Shin Ae Jun, Seongnam-si (KR); Eun Joo Jang, Suwon-si (KR); Yongwook Kim, Hwaseong-si (KR); Tae Gon Kim, Hwaseong-si (KR); Yuho Won, Seoul (KR); Taekhoon Kim, Hwaseong-si (KR); and Hyo Sook Jang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 18, 2023, as Appl. No. 18/354,182.
Application 18/354,182 is a continuation of application No. 15/830,134, filed on Dec. 4, 2017, granted, now 11,746,290.
Application 15/830,134 is a continuation in part of application No. 14/494,673, filed on Sep. 24, 2014, granted, now 9,834,724, issued on Dec. 5, 2017.
Claims priority of application No. 10-2013-0114601 (KR), filed on Sep. 26, 2013; and application No. 10-2014-0124542 (KR), filed on Sep. 18, 2014.
Prior Publication US 2023/0365862 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/88 (2006.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/61 (2006.01); C09K 11/70 (2006.01); C09K 11/72 (2006.01); H01L 29/06 (2006.01); H01L 29/22 (2006.01); H01L 33/50 (2010.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)

CPC C09K 11/883 (2013.01) [C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/61 (2013.01); C09K 11/612 (2013.01); C09K 11/70 (2013.01); C09K 11/705 (2013.01); C09K 11/72 (2013.01); C09K 11/722 (2013.01); C09K 11/88 (2013.01); H01L 29/0665 (2013.01); H01L 29/22 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/818 (2013.01); Y10S 977/824 (2013.01); Y10S 977/825 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01)]

17 Claims

1. A core-shell nanocrystal particle, comprising at least one halogen element,

wherein the core-shell nanocrystal particle comprises a core comprising a first semiconductor nanocrystal; and a shell surrounding the core,

wherein the at least one halogen element comprises fluorine,

wherein the first semiconductor nanocrystal of the core comprises an indium phosphide or a zinc tellurium selenide, and

the shell comprises a ZnSe, a ZnS, a ZnSeS, or a combination thereof,

wherein the core-shell nanocrystal particle has a full width at half maximum of less than 50 nanometers, and

wherein the core-shell nanocrystal particle does not comprise cadmium.