US 12,215,031 B2
High purity polysilocarb derived silicon carbide powder
Andrew R. Hopkins, Sylvania, OH (US); Ashish P. Diwanji, New Albany, OH (US); Walter J. Sherwood, Glenville, NY (US); Douglas M. Dukes, Troy, NY (US); Glenn Sandgren, Ambler, PA (US); Mark S. Land, Houston, TX (US); and Brian L. Benac, Hadley, NY (US)
Assigned to Pallidus, Inc., Albany, NY (US)
Filed by MELIOR INNOVATIONS, INC., Houston, TX (US)
Filed on Sep. 24, 2015, as Appl. No. 14/864,162.
Application 14/864,162 is a continuation in part of application No. 14/268,150, filed on May 2, 2014, granted, now 9,815,943.
Application 14/864,162 is a continuation in part of application No. 14/634,814, filed on Feb. 28, 2015, granted, now 10,167,366.
Application 14/864,162 is a continuation in part of application No. 14/212,896, filed on Mar. 14, 2014, granted, now 9,815,952.
Claims priority of provisional application 62/055,397, filed on Sep. 25, 2014.
Claims priority of provisional application 62/055,461, filed on Sep. 25, 2014.
Claims priority of provisional application 62/055,497, filed on Sep. 25, 2014.
Claims priority of provisional application 62/112,025, filed on Feb. 4, 2015.
Claims priority of provisional application 61/818,906, filed on May 2, 2013.
Claims priority of provisional application 61/818,981, filed on May 3, 2013.
Claims priority of provisional application 61/946,598, filed on Feb. 28, 2014.
Prior Publication US 2016/0207783 A1, Jul. 21, 2016
Int. Cl. C01B 32/956 (2017.01); C01B 32/977 (2017.01); C04B 35/36 (2006.01); C04B 35/56 (2006.01); C04B 35/571 (2006.01); C04B 35/80 (2006.01); C08G 77/20 (2006.01); C08G 77/50 (2006.01); C08L 83/04 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C08G 77/00 (2006.01); C08G 77/12 (2006.01); C09K 8/80 (2006.01); H01L 21/02 (2006.01)
CPC C01B 32/956 (2017.08) [C01B 32/977 (2017.08); C04B 35/56 (2013.01); C04B 35/5603 (2013.01); C04B 35/571 (2013.01); C04B 35/80 (2013.01); C08G 77/20 (2013.01); C08G 77/50 (2013.01); C08L 83/04 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C01P 2002/30 (2013.01); C01P 2006/32 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/44 (2013.01); C04B 2235/48 (2013.01); C04B 2235/483 (2013.01); C04B 2235/528 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/72 (2013.01); C04B 2235/727 (2013.01); C04B 2235/76 (2013.01); C04B 2235/766 (2013.01); C04B 2235/767 (2013.01); C04B 2235/77 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/9684 (2013.01); C08G 77/12 (2013.01); C08G 77/80 (2013.01); C09K 8/80 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/0262 (2013.01)] 3 Claims
 
1. A high purity polysilocarb derived ceramic SiC powder the powder comprising:
a. silicon carbide;
b. the powder having an average diameter of less than 1 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure; and,
c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.