US 12,215,016 B2
Piezoelectric anti-stiction structure for microelectromechanical systems
Fan Hu, Taipei (TW); Chun-Ren Cheng, Hsin-Chu (TW); Hsiang-Fu Chen, Zhubei (TW); and Wen-Chuan Tai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/366,151.
Application 18/366,151 is a division of application No. 17/840,892, filed on Jun. 15, 2022, granted, now 11,834,325.
Application 17/840,892 is a division of application No. 16/558,539, filed on Sep. 3, 2019, granted, now 11,365,115, issued on Jun. 21, 2022.
Prior Publication US 2023/0373780 A1, Nov. 23, 2023
Int. Cl. B81B 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 3/0013 (2013.01) [B81C 1/00968 (2013.01); B81B 2203/0109 (2013.01); B81B 2203/04 (2013.01); B81B 2207/012 (2013.01); B81B 2207/03 (2013.01); B81B 2207/07 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip (IC), comprising:
a microelectromechanical system (MEMS) comprising:
an interconnect structure in a dielectric structure, which overlies a semiconductor substrate;
an additional semiconductor substrate overlying the dielectric structure and comprising a movable mass spaced from the semiconductor substrate;
a cavity between the semiconductor substrate and the movable mass, wherein opposite sidewalls of the movable mass are between opposite sidewalls of the cavity; and
a first piezoelectric anti-stiction structure on a first surface of the cavity, wherein the first piezoelectric anti-stiction structure comprises a first piezoelectric structure and a first electrode; and
bias circuitry electrically coupled to the first electrode, wherein the bias circuitry is configured to provide a first voltage to the first electrode;
wherein the interconnect structure has a pair of vias extending from a first elevation at a bottom surface of the cavity to a second elevation at a bottom surface of the additional semiconductor substrate, and wherein the pair of vias have different heights and are electrically coupled respectively to the movable mass and the first piezoelectric anti-stiction structure.