| CPC B29C 64/273 (2017.08) [B22F 10/28 (2021.01); B22F 12/00 (2021.01); B23K 26/0622 (2015.10); B23K 26/066 (2015.10); B23K 26/342 (2015.10); B29C 64/153 (2017.08); B29C 64/282 (2017.08); B29C 64/286 (2017.08); B33Y 10/00 (2014.12); B33Y 30/00 (2014.12); B22F 10/10 (2021.01); B22F 10/362 (2021.01); B22F 10/366 (2021.01); B33Y 50/02 (2014.12); Y02P 10/25 (2015.11)] | 20 Claims |
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1. A method involving a substrate having an interface layer, wherein the interface layer forms only an upper surface portion of the substrate, and a feedstock material placed on the interface layer, the method comprising:
generating, using a laser system, a first beam component providing a first power flux level;
generating, using the laser system, a second beam component providing a second power flux level which is greater than said first power flux level;
heating the feedstock material to a first level short of a melting point of the feedstock material, using the first beam component, at which point the particles of the feedstock material begin to experience surface tension forces relative to the interface layer of the substrate;
further heating the particles of feedstock material to a second level to melt the feedstock material and also to melt the interface layer of the substrate, wherein the interface layer of the substrate comprises a layer having a thickness less than a full thickness of the substrate, such that a portion of the interface layer remains unmelted by the second beam component as the particles of feedstock material and the interface layer are bonded together; and
configuring the laser system such that the second beam component has a duration less than the first beam component by a factor of at least 1×10−3, and a power controlled to be sufficient only to melt the interface layer of the substrate.
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