US 12,214,446 B2
Laser lift-off integrated apparatus
Jingquan Lu, Guangdong (CN); Junjie Ren, Guangdong (CN); Wenrong Zhuang, Guangdong (CN); and Ming Sun, Guangdong (CN)
Assigned to SINO NITRIDE SEMICONDUCTOR CO., LTD., (CN)
Appl. No. 17/310,567
Filed by SINO NITRIDE SEMICONDUCTOR CO., LTD., Guangdong (CN)
PCT Filed Jun. 1, 2020, PCT No. PCT/CN2020/093665
§ 371(c)(1), (2) Date Aug. 11, 2021,
PCT Pub. No. WO2021/036381, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 201910788121.X (CN), filed on Aug. 26, 2019.
Prior Publication US 2022/0176496 A1, Jun. 9, 2022
Int. Cl. B23K 26/53 (2014.01); B23K 26/00 (2014.01); B23K 26/03 (2006.01); B23K 26/06 (2014.01); B23K 26/08 (2014.01); B23K 26/082 (2014.01); B23K 26/70 (2014.01); B23K 103/00 (2006.01)
CPC B23K 26/53 (2015.10) [B23K 26/00 (2013.01); B23K 26/032 (2013.01); B23K 26/0665 (2013.01); B23K 26/082 (2015.10); B23K 26/702 (2015.10); B23K 26/0823 (2013.01); B23K 26/083 (2013.01); B23K 2103/56 (2018.08)] 9 Claims
OG exemplary drawing
 
1. A laser lift-off integrated apparatus, comprising:
a laser light source configured to perform laser lift-off on a wafer to undergo lift-off;
a lift-off chamber configured to bear the wafer to undergo lift-off;
a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process;
a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off; and
a movable device configured to adjust, according to the surface profile information acquired by the profile measuring device, a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off,
wherein the profile measuring device is further configured to, after the surface profile information of the wafer to undergo lift-off is acquired, divide, according to the surface profile information, a surface of the wafer to undergo lift-off into a plurality of areas to undergo lift-off, and
wherein a number of the plurality of areas to undergo lift-off is set according to an overall profile height difference of the wafer to undergo lift-off and a focal depth of the laser light source; and a maximum height difference inside each of the plurality of areas to undergo lift-off is less than or equal to the focal depth of the laser light source.