US 11,889,776 B2
Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element
Ryutaro Yasuhara, Hyogo (JP); Satoru Fujii, Osaka (JP); Takumi Mikawa, Shiga (JP); Atsushi Himeno, Osaka (JP); Kengo Nishio, Ibaraki (JP); Takehide Miyazaki, Ibaraki (JP); Hiroyuki Akinaga, Ibaraki (JP); Yasuhisa Naitoh, Ibaraki (JP); and Hisashi Shima, Ibaraki (JP)
Assigned to Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on Jun. 23, 2021, as Appl. No. 17/356,029.
Application 17/356,029 is a continuation of application No. PCT/JP2019/030901, filed on Aug. 6, 2019.
Claims priority of application No. 2018-241986 (JP), filed on Dec. 26, 2018.
Prior Publication US 2021/0320248 A1, Oct. 14, 2021
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/828 (2023.02) [H10B 63/20 (2023.02); H10B 63/30 (2023.02); H10N 70/24 (2023.02)] 19 Claims
OG exemplary drawing
 
19. A variable resistance non-volatile memory element, comprising:
a first electrode;
a second electrode; and
a variable resistance layer between the first electrode and the second electrode, the variable resistance layer having a resistance value reversibly variable based on an electrical signal applied between the first electrode and the second electrode, wherein
the variable resistance layer includes:
a first variable resistance layer that includes a first metal oxide of an oxygen-deficient type, the first metal oxide containing a first metal element and oxygen; and
a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, the composite oxide having a degree of oxygen deficiency different from a degree of oxygen deficiency of the first metal oxide,
the degree of oxygen deficiency of the composite oxide is lower than the degree of oxygen deficiency of the first metal oxide,
the composite oxide has, at room temperature, an oxygen diffusion coefficient smaller than an oxygen diffusion coefficient, at the room temperature, of a second metal oxide containing the first metal element and oxygen, and having a degree of oxygen deficiency equal to the degree of oxygen deficiency of the composite oxide, and
the composite oxide has a bulk modulus larger than a bulk modulus of the second metal oxide.